PMRAM™ — Next-Generation Non-Volatile Memory

Compared to traditional memory (e.g. DRAM) or emerging memory (e.g. MRAM), PMRAM delivers unmatched energy efficiency — the lowest-power technology that can scale to a mainstream memory solution — with high-temperature reliability, operating seamlessly up to 125 °C.

PMRAM is a two-terminal device that does not rely on Spin-Hall effects for spin-current generation — in fact it uses no spin current at all. It utilises full voltage (electric-field-controlled) switching with transient current shorts on the order of tens of picoseconds, rather than the steady current STT-MRAM or ReRAM require. The result is an extremely low-power device with deterministic — not stochastic — switching.

Addressed one bit at a time — at nanosecond speed.

A voltage on a word line and a bit line selects the cell where they cross; the stack switches by electric field, with no steady current. Watch a large array being written, bit by bit, at the measured 5 ns switching time.

one cell · the multilayer stack

Two terminals. A voltage across the stack switches the bit — no steady current, no spin current. The read is non-destructive.

crossbar array · word lines × bit lines · liveWRITING

switching time

5 ns

bits written

array time elapsed

0 ns

whole array · 5 ns a bit

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A new paradigm in non-volatile memory.Electric-field switching — no steady current.Deterministic, not stochastic.5 ns measured.A brand-new memory, on a brand-new science.

Where PMRAM separates from other emerging NVM.

Full voltage control <0.1 pJ/bit

Electric-field-controlled switching with transient current shorts (tens of ps). No steady current — extremely low power per bit.

Non-destructive read

Data reading is non-destructive — no need to refresh or re-write data after a read event.

Exceptional endurance >10¹³

Estimated beyond 10¹³ cycles, we measure 10⁸–10⁹ today. Close to infinite for most workloads.

Fast read / write 5 ns

5 ns measured.

Minimum device size 6 nm

Minimum bit size estimated by finite-element analysis to 6 nm — a pathway to high-density storage-class memory without anisotropy-driven heating.

Deterministic switching reliable

Deterministic rather than stochastic switching gives a more reliable, repeatable switching mechanism.

Dynamic range >3000%

Over 3000% measured routinely (20–50×); QM simulation of our structures indicates a theoretical ON/OFF ratio up to 10⁶.

CMOS BEOL compatible +3–4 masks

Fully compatible with standard CMOS back-end-of-line processes with low mask counts.

No Joule heating

Electric-field reliant with no Joule effects — a smaller cell than the best embedded SRAM (L2/L3).

Real results, measured on the device.

PMRAM figures from our own characterisation.

<0pJ/bit

Energy per bit

Electric-field switching, transient current only — no steady current.

0ns

Read / write · measured

Our simulations show sub-nanosecond switching is achievable.

10¹³cycles

Endurance

Estimated; 10⁸–10⁹ measured to date.

0°C

Operating temperature

Industrial and automotive high-temperature stability.

0nm

Minimum device size

Confirmed with finite-element analysis.

Grantedpatents

Patent protection

PMRAM, protected by a growing patent portfolio.

PMRAM™ — next-generation non-volatile memory.

Addressed one bit at a time — at nanosecond speed.

Where PMRAM separates from other emerging NVM.

Real results, measured on the device.

Interested in low-power non-volatile memory?