Our  patented technology (over 30 patents granted worldwide) PiezoMagnetic RAM (PMRAM), is a versatile 2-terminal solid state technology platform offering many advantages compared to current state-of-the-art. Our technology allows us to decrease the energy consumption per bit by a factor of at least 25000 compared to Flash and allows for operation at high temperatures (up to 125C). 

Our first product will be a 2D low capacity fully customizable PMRAM embedded memory to replace eFLASH and SRAM in applications for the automotive, IOT and computer industries. Future updates of the PMRAM will see the memory capacity increase, with a vision to target other market sectors, such as dedicated GPU, CPU, computer and mobile device memory.

Our USP include:

• Low Power writing/reading

• Fast read/write speeds < 10ns – 1ns achievable

• Increased endurance up to 10^15 read/write cycles

• Non-volatile – data retained when device switched off

• High Storage Density – scalable down to 16-20nm process nodes  

• 3D Capable – multibit vertical structures compatible

• High Temperature stability – suitable for industrial and automotive high temperature applications

• Embeddable – Si- based CMOS process compatible